Influence of La Doping on the Transport Properties of Bi 1 –   x  La  x  CuSeO Oxyselenides

D. S. Pankratova; A. P. Novitskii; K. V. Kuskov; I. A. Sergienko; D. V. Leybo; A. T. Burkov; P. P. Konstantinov; V. V. Khovaylo

doi:10.1134/S1063782619050221

Influence of La Doping on the Transport Properties of Bi_{1 –}_xLa_xCuSeO Oxyselenides

Autores: Pankratova D.¹, Novitskii A.¹, Kuskov K.¹, Sergienko I.¹, Leybo D.¹, Burkov A.², Konstantinov P.², Khovaylo V.¹
Afiliações:
1. National University of Science and Technology MISIS
2. Ioffe Institute
Edição: Volume 53, Nº 5 (2019)
Páginas: 624-627
Seção: XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018
URL: https://journals.rcsi.science/1063-7826/article/view/206060
DOI: https://doi.org/10.1134/S1063782619050221
ID: 206060

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The transport properties of p-type oxyselenides with the chemical composition Bi_{1 –}_xLa_xCuSeO (x = 0.02, 0.04, 0.06) are investigated. An analysis of the temperature dependences of the material resistivity and charge-carrier concentration and mobility show that the substitution of La³⁺ for Bi³⁺ ions increases the carrier concentration, presumably, due to the generation of holes as a result of the formation of bismuth vacancies with an increase in the degree of substitution.