Influence of La Doping on the Transport Properties of Bi1 –xLaxCuSeO Oxyselenides
- 作者: Pankratova D.1, Novitskii A.1, Kuskov K.1, Sergienko I.1, Leybo D.1, Burkov A.2, Konstantinov P.2, Khovaylo V.1
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隶属关系:
- National University of Science and Technology MISIS
- Ioffe Institute
- 期: 卷 53, 编号 5 (2019)
- 页面: 624-627
- 栏目: XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/206060
- DOI: https://doi.org/10.1134/S1063782619050221
- ID: 206060
如何引用文章
详细
The transport properties of p-type oxyselenides with the chemical composition Bi1 –xLaxCuSeO (x = 0.02, 0.04, 0.06) are investigated. An analysis of the temperature dependences of the material resistivity and charge-carrier concentration and mobility show that the substitution of La3+ for Bi3+ ions increases the carrier concentration, presumably, due to the generation of holes as a result of the formation of bismuth vacancies with an increase in the degree of substitution.
作者简介
D. Pankratova
National University of Science and Technology MISIS
编辑信件的主要联系方式.
Email: d.pankratova@misis.ru
俄罗斯联邦, Moscow, 119049
A. Novitskii
National University of Science and Technology MISIS
Email: d.pankratova@misis.ru
俄罗斯联邦, Moscow, 119049
K. Kuskov
National University of Science and Technology MISIS
Email: d.pankratova@misis.ru
俄罗斯联邦, Moscow, 119049
I. Sergienko
National University of Science and Technology MISIS
Email: d.pankratova@misis.ru
俄罗斯联邦, Moscow, 119049
D. Leybo
National University of Science and Technology MISIS
Email: d.pankratova@misis.ru
俄罗斯联邦, Moscow, 119049
A. Burkov
Ioffe Institute
Email: d.pankratova@misis.ru
俄罗斯联邦, St. Petersburg, 194021
P. Konstantinov
Ioffe Institute
Email: d.pankratova@misis.ru
俄罗斯联邦, St. Petersburg, 194021
V. Khovaylo
National University of Science and Technology MISIS
Email: d.pankratova@misis.ru
俄罗斯联邦, Moscow, 119049