Influence of La Doping on the Transport Properties of Bi1 –xLaxCuSeO Oxyselenides
- Авторы: Pankratova D.1, Novitskii A.1, Kuskov K.1, Sergienko I.1, Leybo D.1, Burkov A.2, Konstantinov P.2, Khovaylo V.1
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Учреждения:
- National University of Science and Technology MISIS
- Ioffe Institute
- Выпуск: Том 53, № 5 (2019)
- Страницы: 624-627
- Раздел: XVI International Conference “thermoelectrics and Their Applications–2018” (Iscta 2018,) St. Petersburg, October 8–12, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/206060
- DOI: https://doi.org/10.1134/S1063782619050221
- ID: 206060
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Аннотация
The transport properties of p-type oxyselenides with the chemical composition Bi1 –xLaxCuSeO (x = 0.02, 0.04, 0.06) are investigated. An analysis of the temperature dependences of the material resistivity and charge-carrier concentration and mobility show that the substitution of La3+ for Bi3+ ions increases the carrier concentration, presumably, due to the generation of holes as a result of the formation of bismuth vacancies with an increase in the degree of substitution.
Об авторах
D. Pankratova
National University of Science and Technology MISIS
Автор, ответственный за переписку.
Email: d.pankratova@misis.ru
Россия, Moscow, 119049
A. Novitskii
National University of Science and Technology MISIS
Email: d.pankratova@misis.ru
Россия, Moscow, 119049
K. Kuskov
National University of Science and Technology MISIS
Email: d.pankratova@misis.ru
Россия, Moscow, 119049
I. Sergienko
National University of Science and Technology MISIS
Email: d.pankratova@misis.ru
Россия, Moscow, 119049
D. Leybo
National University of Science and Technology MISIS
Email: d.pankratova@misis.ru
Россия, Moscow, 119049
A. Burkov
Ioffe Institute
Email: d.pankratova@misis.ru
Россия, St. Petersburg, 194021
P. Konstantinov
Ioffe Institute
Email: d.pankratova@misis.ru
Россия, St. Petersburg, 194021
V. Khovaylo
National University of Science and Technology MISIS
Email: d.pankratova@misis.ru
Россия, Moscow, 119049