CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures
- Autores: Varavin V.1, Vasilyev V.1, Guzev A.1, Dvoretsky S.1, Kovchavtsev A.1, Marin D.1, Sabinina I.1, Sidorov Y.1, Sidorov G.1, Tsarenko A.1, Yakushev M.1
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Afiliações:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Edição: Volume 50, Nº 12 (2016)
- Páginas: 1626-1629
- Seção: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/198893
- DOI: https://doi.org/10.1134/S1063782616120265
- ID: 198893
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Resumo
The parameters of multilayer CdxHg1–xTe heterostructures for photodetectors operating at wavelengths of up to 5 μm, grown by molecular-beam epitaxy (MBE) on silicon substrates, are studied. The passivating properties of thin CdTe layers on the surface of these structures are analyzed by measuring the C–V characteristics. The temperature dependences of the minority carrier lifetime in the photoabsorption layer after growth and thermal annealing are investigated. Samples of p+–n-type photodiodes are fabricated by the implantation of arsenic ions into n-type layers, doped with In to a concentration of (1–5) × 1015 cm–3. The temperature dependences of the reverse currents are measured at several bias voltages; these currents turn out to be almost two orders of magnitude lower than those for n+–p-type diodes.
Sobre autores
V. Varavin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
Rússia, Novosibirsk, 630090
V. Vasilyev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
Rússia, Novosibirsk, 630090
A. Guzev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
Rússia, Novosibirsk, 630090
S. Dvoretsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
Rússia, Novosibirsk, 630090
A. Kovchavtsev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
Rússia, Novosibirsk, 630090
D. Marin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
Rússia, Novosibirsk, 630090
I. Sabinina
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
Rússia, Novosibirsk, 630090
Yu. Sidorov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
Rússia, Novosibirsk, 630090
G. Sidorov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
Rússia, Novosibirsk, 630090
A. Tsarenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
Rússia, Novosibirsk, 630090
M. Yakushev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Autor responsável pela correspondência
Email: yakushev@isp.nsc.ru
Rússia, Novosibirsk, 630090