CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures
- Авторлар: Varavin V.1, Vasilyev V.1, Guzev A.1, Dvoretsky S.1, Kovchavtsev A.1, Marin D.1, Sabinina I.1, Sidorov Y.1, Sidorov G.1, Tsarenko A.1, Yakushev M.1
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Мекемелер:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Шығарылым: Том 50, № 12 (2016)
- Беттер: 1626-1629
- Бөлім: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/198893
- DOI: https://doi.org/10.1134/S1063782616120265
- ID: 198893
Дәйексөз келтіру
Аннотация
The parameters of multilayer CdxHg1–xTe heterostructures for photodetectors operating at wavelengths of up to 5 μm, grown by molecular-beam epitaxy (MBE) on silicon substrates, are studied. The passivating properties of thin CdTe layers on the surface of these structures are analyzed by measuring the C–V characteristics. The temperature dependences of the minority carrier lifetime in the photoabsorption layer after growth and thermal annealing are investigated. Samples of p+–n-type photodiodes are fabricated by the implantation of arsenic ions into n-type layers, doped with In to a concentration of (1–5) × 1015 cm–3. The temperature dependences of the reverse currents are measured at several bias voltages; these currents turn out to be almost two orders of magnitude lower than those for n+–p-type diodes.
Авторлар туралы
V. Varavin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
Ресей, Novosibirsk, 630090
V. Vasilyev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
Ресей, Novosibirsk, 630090
A. Guzev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
Ресей, Novosibirsk, 630090
S. Dvoretsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
Ресей, Novosibirsk, 630090
A. Kovchavtsev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
Ресей, Novosibirsk, 630090
D. Marin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
Ресей, Novosibirsk, 630090
I. Sabinina
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
Ресей, Novosibirsk, 630090
Yu. Sidorov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
Ресей, Novosibirsk, 630090
G. Sidorov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
Ресей, Novosibirsk, 630090
A. Tsarenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
Ресей, Novosibirsk, 630090
M. Yakushev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Хат алмасуға жауапты Автор.
Email: yakushev@isp.nsc.ru
Ресей, Novosibirsk, 630090