CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures
- 作者: Varavin V.1, Vasilyev V.1, Guzev A.1, Dvoretsky S.1, Kovchavtsev A.1, Marin D.1, Sabinina I.1, Sidorov Y.1, Sidorov G.1, Tsarenko A.1, Yakushev M.1
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隶属关系:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- 期: 卷 50, 编号 12 (2016)
- 页面: 1626-1629
- 栏目: XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016
- URL: https://journals.rcsi.science/1063-7826/article/view/198893
- DOI: https://doi.org/10.1134/S1063782616120265
- ID: 198893
如何引用文章
详细
The parameters of multilayer CdxHg1–xTe heterostructures for photodetectors operating at wavelengths of up to 5 μm, grown by molecular-beam epitaxy (MBE) on silicon substrates, are studied. The passivating properties of thin CdTe layers on the surface of these structures are analyzed by measuring the C–V characteristics. The temperature dependences of the minority carrier lifetime in the photoabsorption layer after growth and thermal annealing are investigated. Samples of p+–n-type photodiodes are fabricated by the implantation of arsenic ions into n-type layers, doped with In to a concentration of (1–5) × 1015 cm–3. The temperature dependences of the reverse currents are measured at several bias voltages; these currents turn out to be almost two orders of magnitude lower than those for n+–p-type diodes.
作者简介
V. Varavin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
V. Vasilyev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
A. Guzev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
S. Dvoretsky
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
A. Kovchavtsev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
D. Marin
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
I. Sabinina
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
Yu. Sidorov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
G. Sidorov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
A. Tsarenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Email: yakushev@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090
M. Yakushev
Rzhanov Institute of Semiconductor Physics, Siberian Branch
编辑信件的主要联系方式.
Email: yakushev@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090