| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 52, № 5 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, Russia, June 26–30, 2017. Nanostructure Characterization |
Composition and Band Structure of the Native Oxide Nanolayer on the Ion Beam Treated Surface of the GaAs Wafer |
|
| Том 52, № 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE CHARACTERIZATION |
Сomposition Depth Profiling of the GaAs Native Oxide Irradiated by an Ar+ Ion Beam |
|
| Том 52, № 16 (2018) |
26th INTERNATIONAL SYMPOSIUM “NANOSTRUCTURES: PHYSICS AND TECHNOLOGY”. NANOSTRUCTURE CHARACTERIZATION |
In situ Bandgap Determination of the GaAsN Nanolayer Prepared by Low-Energy \({\text{N}}_{2}^{ + }\)Ion Implantation |
|
| Том 53, № 4 (2019) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Defect Formation under Nitrogen-Ion Implantation and Subsequent Annealing in GaAs Structures with an Uncovered Surface and a Surface Covered with an AlN Film |
|
| Том 53, № 14 (2019) |
Nanostructures Characterization |
Arsenic Diffusion in the Natural Oxidation of the Heavily Defected GaAs Surface |
|
| Том 53, № 14 (2019) |
Nanostructures Characterization |
J–V Characteristic of p–n Structure Formed on n-GaAs Surface by Ar+ Ion Beam |
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