| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 50, № 4 (2016) |
Physics of Semiconductor Devices |
Heterostructures of metamorphic GaInAs photovoltaic converters fabricated by MOCVD on GaAs substrates |
|
| Том 50, № 7 (2016) |
Physics of Semiconductor Devices |
On current spreading in solar cells: a two-parameter tube model |
|
| Том 50, № 9 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Optical properties of hybrid quantum-confined structures with high absorbance |
|
| Том 50, № 9 (2016) |
Physics of Semiconductor Devices |
Photovoltaic laser-power converter based on AlGaAs/GaAs heterostructures |
|
| Том 51, № 1 (2017) |
Physics of Semiconductor Devices |
Optimization of structural and growth parameters of metamorphic InGaAs photovoltaic converters grown by MOCVD |
|
| Том 51, № 3 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Optical properties of hybrid quantum-well–dots nanostructures grown by MOCVD |
|
| Том 51, № 5 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
InAs QDs in a metamorphic In0.25Ga0.75As matrix, grown by MOCVD |
|
| Том 52, № 1 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Bimodality in Arrays of In0.4Ga0.6As Hybrid Quantum-Confined Heterostructures Grown on GaAs Substrates |
|
| Том 52, № 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Quantum Wells, Quantum Wires, Quantum Dots, and Band Structure |
Density Control of InP/GaInP Quantum Dots Grown by Metal-Organic Vapor-Phase Epitaxy |
|
| Том 52, № 7 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
In0.8Ga0.2As Quantum Dots for GaAs Solar Cells: Metal-Organic Vapor-Phase Epitaxy Growth Peculiarities and Properties |
|
| Том 52, № 10 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Recombination in GaAs p–i–n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities |
|
| Том 52, № 10 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Multilayer Quantum Well–Dot InGaAs Heterostructures in GaAs-based Photovoltaic Converters |
|
| Том 52, № 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Reduction of Internal Loss and Thermal Resistance in Diode Lasers with Coupled Waveguides |
|
| Том 52, № 14 (2018) |
Lasers and Optoelectronic Devices |
Diode Lasers with Near-Surface Active Region |
|
| Том 53, № 8 (2019) |
Physics of Semiconductor Devices |
Evaluation of the Impact of Surface Recombination in Microdisk Lasers by Means of High-Frequency Modulation |
|
| Том 53, № 8 (2019) |
Physics of Semiconductor Devices |
Module of Laser-Radiation (λ = 1064 nm) Photovoltaic Converters |
|
| Том 53, № 11 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Time-Resolved Photoluminescence of InGaAs Nanostructures Different in Quantum Dimensionality |
|
| Том 53, № 11 (2019) |
Physics of Semiconductor Devices |
Counteracting the Photovoltaic Effect in the Top Intergenerator Part of GaInP/GaAs/Ge Solar Cells |
|
| Том 53, № 14 (2019) |
Nanostructure Devices |
Capacitive Characteristics of High-Speed Photovoltaic Converters at Combined Lighting |
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