| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 50, № 3 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Epitaxially Grown Monoisotopic Si, Ge, and Si1–xGex Alloy Layers: Production and Some Properties |
|
| Том 50, № 8 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Formation of donors in germanium–silicon alloys implanted with hydrogen ions with different energies |
|
| Том 50, № 10 (2016) |
Electronic Properties of Semiconductors |
Some challenging points in the identification of defects in floating-zone n-type silicon irradiated with 8 and 15 MeV protons |
|
| Том 50, № 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Polarization of the induced THz emission of donors in silicon |
|
| Том 52, № 13 (2018) |
Electronic Properties of Semiconductors |
Interaction Rates of Group-III and Group-V Impurities with Intrinsic Point Defects in Irradiated Si and Ge |
|
| Том 53, № 3 (2019) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Decomposition of a Solid Solution of Interstitial Magnesium in Silicon |
|
| Том 53, № 6 (2019) |
Electronic Properties of Semiconductors |
DLTS Investigation of the Energy Spectrum of Si:Mg Crystals |
|
| Том 53, № 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Chemical Shift and Exchange Interaction Energy of the 1s States of Magnesium Donors in Silicon. The Possibility of Stimulated Emission |
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| Том 53, № 9 (2019) |
Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 |
Stimulated Terahertz Emission of Bismuth Donors in Uniaxially Strained Silicon under Optical Intracenter Excitation |
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