| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 50, № 4 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Specific features of doping with antimony during the ion-beam crystallization of silicon |
|
| Том 50, № 9 (2016) |
Physics of Semiconductor Devices |
Synthesis and study of thin TiO2 films doped with silver nanoparticles for the antireflection coatings and transparent contacts of photovoltaic converters |
|
| Том 51, № 3 (2017) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Crystal defects in solar cells produced by the method of thermomigration |
|
| Том 51, № 3 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Pulsed laser deposition of AlxGa1–xAs and GaP thin films onto Si substrates for photoelectric converters |
|
| Том 51, № 10 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Growth and properties of isoparametric InAlGaPAs/GaAs heterostructures |
|
| Том 52, № 6 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Study of the Structural and Luminescence Properties of InAs/GaAs Heterostructures with Bi-Doped Potential Barriers |
|
| Том 52, № 8 (2018) |
Surfaces, Interfaces, and Thin Films |
Effect of the Ag Nanoparticle Concentration in TiO2–Ag Functional Coatings on the Characteristics of GaInP/GaAs/Ge Photoconverters |
|
| Том 53, № 7 (2019) |
Surfaces, Interfaces, and Thin Films |
On the Properties of Isoparametric AlInGaAsP/InP Heterostructures |
|
| Том 53, № 8 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Effect of Bismuth on the Properties of Elastically Stressed AlGaInAsP〈Bi〉/InP Heterostructures |
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