Tight-binding simulation of silicon and germanium nanocrystals
- Авторлар: Gert A.1, Nestoklon M.1, Prokofiev A.1, Yassievich I.1
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Мекемелер:
- Ioffe Institute
- Шығарылым: Том 51, № 10 (2017)
- Беттер: 1274-1289
- Бөлім: Review
- URL: https://journals.rcsi.science/1063-7826/article/view/201305
- DOI: https://doi.org/10.1134/S1063782617100098
- ID: 201305
Дәйексөз келтіру
Аннотация
This review is devoted to the modeling of Si and Ge nanocrystals by means of the tight-binding method. First we give the short outline of the modeling methods and their application for the discription of silicon and germanium nanocrystals. Then, the tight-binding method with extended s, p, d, and s* basis is explained in details and the results obtained with the use of this method are presented.
Авторлар туралы
A. Gert
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: anton.gert@mail.ioffe.ru
Ресей, St. Petersburg, 194021
M. Nestoklon
Ioffe Institute
Email: anton.gert@mail.ioffe.ru
Ресей, St. Petersburg, 194021
A. Prokofiev
Ioffe Institute
Email: anton.gert@mail.ioffe.ru
Ресей, St. Petersburg, 194021
I. Yassievich
Ioffe Institute
Email: anton.gert@mail.ioffe.ru
Ресей, St. Petersburg, 194021