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Semiconductors
ISSN 1063-7826 (Print) ISSN 1090-6479 (Online)
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
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Keywords GaAs GaAs Substrate GaN Gallium Nitride Sapphire Substrate Versus Characteristic annealing carbon nanotubes doping exciton graphene heterostructure heterostructures luminescence molecular-beam epitaxy photoconductivity photoluminescence quantum dots quantum well silicon thin films
Home > Search > Browse Section Index > Review

Review

Issue Title File
Vol 53, No 3 (2019) Discovery of III–V Semiconductors: Physical Properties and Application PDF
(Eng)
Mikhailova M.P., Moiseev K.D., Yakovlev Y.P.
Vol 53, No 2 (2019) Indium Arsenide-Based Spontaneous Emission Sources (Review: a Decade Later) PDF
(Eng)
Karandashev S.A., Matveev B.A., Remennyi M.A.
Vol 51, No 10 (2017) Anisotropic Jahn–Teller acceptors formed in GaAs by first-group elements with a filled d shell PDF
(Eng)
Gutkin A.A., Averkiev N.S.
Vol 51, No 10 (2017) Tight-binding simulation of silicon and germanium nanocrystals PDF
(Eng)
Gert A.V., Nestoklon M.O., Prokofiev A.A., Yassievich I.N.
Vol 50, No 1 (2016) Exciton emission of crystalline Zn(S)Se thin films arranged in microcavities based on amorphous insulating coatings PDF
(Eng)
Kozlovsky V.I., Krivobok V.S., Kuznetsov P.I., Nikolaev S.N., Onistchenko E.E., Pruchkina A.A., Timiryazev A.G., Chentsov S.I.
Vol 50, No 1 (2016) Simulation of the β-voltaic effect in silicon pin structures irradiated with electrons from a nickel-63 β source PDF
(Eng)
Nagornov Y.S., Murashev V.N.
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