Semiconductors
ISSN 1063-7826 (Print)
ISSN 1090-6479 (Online)
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Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
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Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
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Review
Review
Issue
Title
File
Vol 53, No 3 (2019)
Discovery of III–V Semiconductors: Physical Properties and Application
(Eng)
Mikhailova M.P., Moiseev K.D., Yakovlev Y.P.
Vol 53, No 2 (2019)
Indium Arsenide-Based Spontaneous Emission Sources (Review: a Decade Later)
(Eng)
Karandashev S.A., Matveev B.A., Remennyi M.A.
Vol 51, No 10 (2017)
Anisotropic Jahn–Teller acceptors formed in GaAs by first-group elements with a filled
d
shell
(Eng)
Gutkin A.A., Averkiev N.S.
Vol 51, No 10 (2017)
Tight-binding simulation of silicon and germanium nanocrystals
(Eng)
Gert A.V., Nestoklon M.O., Prokofiev A.A., Yassievich I.N.
Vol 50, No 1 (2016)
Exciton emission of crystalline Zn(S)Se thin films arranged in microcavities based on amorphous insulating coatings
(Eng)
Kozlovsky V.I., Krivobok V.S., Kuznetsov P.I., Nikolaev S.N., Onistchenko E.E., Pruchkina A.A., Timiryazev A.G., Chentsov S.I.
Vol 50, No 1 (2016)
Simulation of the β-voltaic effect in silicon
pin
structures irradiated with electrons from a nickel-63 β source
(Eng)
Nagornov Y.S., Murashev V.N.
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