Tight-binding simulation of silicon and germanium nanocrystals
- Authors: Gert A.V.1, Nestoklon M.O.1, Prokofiev A.A.1, Yassievich I.N.1
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Affiliations:
- Ioffe Institute
- Issue: Vol 51, No 10 (2017)
- Pages: 1274-1289
- Section: Review
- URL: https://journals.rcsi.science/1063-7826/article/view/201305
- DOI: https://doi.org/10.1134/S1063782617100098
- ID: 201305
Cite item
Abstract
This review is devoted to the modeling of Si and Ge nanocrystals by means of the tight-binding method. First we give the short outline of the modeling methods and their application for the discription of silicon and germanium nanocrystals. Then, the tight-binding method with extended s, p, d, and s* basis is explained in details and the results obtained with the use of this method are presented.
About the authors
A. V. Gert
Ioffe Institute
Author for correspondence.
Email: anton.gert@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
M. O. Nestoklon
Ioffe Institute
Email: anton.gert@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
A. A. Prokofiev
Ioffe Institute
Email: anton.gert@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021
I. N. Yassievich
Ioffe Institute
Email: anton.gert@mail.ioffe.ru
Russian Federation, St. Petersburg, 194021