Tight-binding simulation of silicon and germanium nanocrystals
- 作者: Gert A.1, Nestoklon M.1, Prokofiev A.1, Yassievich I.1
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隶属关系:
- Ioffe Institute
- 期: 卷 51, 编号 10 (2017)
- 页面: 1274-1289
- 栏目: Review
- URL: https://journals.rcsi.science/1063-7826/article/view/201305
- DOI: https://doi.org/10.1134/S1063782617100098
- ID: 201305
如何引用文章
详细
This review is devoted to the modeling of Si and Ge nanocrystals by means of the tight-binding method. First we give the short outline of the modeling methods and their application for the discription of silicon and germanium nanocrystals. Then, the tight-binding method with extended s, p, d, and s* basis is explained in details and the results obtained with the use of this method are presented.
作者简介
A. Gert
Ioffe Institute
编辑信件的主要联系方式.
Email: anton.gert@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
M. Nestoklon
Ioffe Institute
Email: anton.gert@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Prokofiev
Ioffe Institute
Email: anton.gert@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
I. Yassievich
Ioffe Institute
Email: anton.gert@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021