Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium
- Авторлар: Seredin P.1, Fedyukin A.1, Arsentyev I.2, Vavilova L.2, Tarasov I.2, Prutskij T.3, Leiste H.4, Rinke M.4
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Мекемелер:
- Voronezh State University
- Ioffe Physical–Technical Institute
- Instituto de Ciencias
- Karlsruhe Nano Micro Facility
- Шығарылым: Том 50, № 7 (2016)
- Беттер: 853-859
- Бөлім: Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)
- URL: https://journals.rcsi.science/1063-7826/article/view/197347
- DOI: https://doi.org/10.1134/S106378261607023X
- ID: 197347
Дәйексөз келтіру
Аннотация
The aim of this study is to explore the structural and optical properties of single-crystal GaAs(100) doped with Cr atoms by burning them into the substrate at high temperatures. The diffusion of chromium into single-crystal GaAs(100) substrates brings about the formation of a thin (~20–40 μm) GaAs:Cr transition layer. In this case, chromium atoms are incorporated into the gallium-arsenide crystal lattice and occupy the regular atomic sites of the metal sublattice. As the chromium diffusion time is increased, such behavior of the dopant impurity yields changes in the energy structure of GaAs, a decrease in the absorption at free charge carriers, and a lowering of the surface recombination rate. As a result, the photoluminescence signal from the sample is significantly enhanced.
Авторлар туралы
P. Seredin
Voronezh State University
Хат алмасуға жауапты Автор.
Email: paul@phys.vsu.ru
Ресей, Voronezh, 394006
A. Fedyukin
Voronezh State University
Email: paul@phys.vsu.ru
Ресей, Voronezh, 394006
I. Arsentyev
Ioffe Physical–Technical Institute
Email: paul@phys.vsu.ru
Ресей, St. Petersburg, 194021
L. Vavilova
Ioffe Physical–Technical Institute
Email: paul@phys.vsu.ru
Ресей, St. Petersburg, 194021
I. Tarasov
Ioffe Physical–Technical Institute
Email: paul@phys.vsu.ru
Ресей, St. Petersburg, 194021
T. Prutskij
Instituto de Ciencias
Email: paul@phys.vsu.ru
Мексика, Puebla, Pue., 72050
H. Leiste
Karlsruhe Nano Micro Facility
Email: paul@phys.vsu.ru
Германия, Eggenstein-Leopoldshafen, 76344
M. Rinke
Karlsruhe Nano Micro Facility
Email: paul@phys.vsu.ru
Германия, Eggenstein-Leopoldshafen, 76344