Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium
- 作者: Seredin P.1, Fedyukin A.1, Arsentyev I.2, Vavilova L.2, Tarasov I.2, Prutskij T.3, Leiste H.4, Rinke M.4
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隶属关系:
- Voronezh State University
- Ioffe Physical–Technical Institute
- Instituto de Ciencias
- Karlsruhe Nano Micro Facility
- 期: 卷 50, 编号 7 (2016)
- 页面: 853-859
- 栏目: Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)
- URL: https://journals.rcsi.science/1063-7826/article/view/197347
- DOI: https://doi.org/10.1134/S106378261607023X
- ID: 197347
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详细
The aim of this study is to explore the structural and optical properties of single-crystal GaAs(100) doped with Cr atoms by burning them into the substrate at high temperatures. The diffusion of chromium into single-crystal GaAs(100) substrates brings about the formation of a thin (~20–40 μm) GaAs:Cr transition layer. In this case, chromium atoms are incorporated into the gallium-arsenide crystal lattice and occupy the regular atomic sites of the metal sublattice. As the chromium diffusion time is increased, such behavior of the dopant impurity yields changes in the energy structure of GaAs, a decrease in the absorption at free charge carriers, and a lowering of the surface recombination rate. As a result, the photoluminescence signal from the sample is significantly enhanced.
作者简介
P. Seredin
Voronezh State University
编辑信件的主要联系方式.
Email: paul@phys.vsu.ru
俄罗斯联邦, Voronezh, 394006
A. Fedyukin
Voronezh State University
Email: paul@phys.vsu.ru
俄罗斯联邦, Voronezh, 394006
I. Arsentyev
Ioffe Physical–Technical Institute
Email: paul@phys.vsu.ru
俄罗斯联邦, St. Petersburg, 194021
L. Vavilova
Ioffe Physical–Technical Institute
Email: paul@phys.vsu.ru
俄罗斯联邦, St. Petersburg, 194021
I. Tarasov
Ioffe Physical–Technical Institute
Email: paul@phys.vsu.ru
俄罗斯联邦, St. Petersburg, 194021
T. Prutskij
Instituto de Ciencias
Email: paul@phys.vsu.ru
墨西哥, Puebla, Pue., 72050
H. Leiste
Karlsruhe Nano Micro Facility
Email: paul@phys.vsu.ru
德国, Eggenstein-Leopoldshafen, 76344
M. Rinke
Karlsruhe Nano Micro Facility
Email: paul@phys.vsu.ru
德国, Eggenstein-Leopoldshafen, 76344