Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium
- Авторы: Seredin P.1, Fedyukin A.1, Arsentyev I.2, Vavilova L.2, Tarasov I.2, Prutskij T.3, Leiste H.4, Rinke M.4
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Учреждения:
- Voronezh State University
- Ioffe Physical–Technical Institute
- Instituto de Ciencias
- Karlsruhe Nano Micro Facility
- Выпуск: Том 50, № 7 (2016)
- Страницы: 853-859
- Раздел: Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)
- URL: https://journals.rcsi.science/1063-7826/article/view/197347
- DOI: https://doi.org/10.1134/S106378261607023X
- ID: 197347
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Аннотация
The aim of this study is to explore the structural and optical properties of single-crystal GaAs(100) doped with Cr atoms by burning them into the substrate at high temperatures. The diffusion of chromium into single-crystal GaAs(100) substrates brings about the formation of a thin (~20–40 μm) GaAs:Cr transition layer. In this case, chromium atoms are incorporated into the gallium-arsenide crystal lattice and occupy the regular atomic sites of the metal sublattice. As the chromium diffusion time is increased, such behavior of the dopant impurity yields changes in the energy structure of GaAs, a decrease in the absorption at free charge carriers, and a lowering of the surface recombination rate. As a result, the photoluminescence signal from the sample is significantly enhanced.
Об авторах
P. Seredin
Voronezh State University
Автор, ответственный за переписку.
Email: paul@phys.vsu.ru
Россия, Voronezh, 394006
A. Fedyukin
Voronezh State University
Email: paul@phys.vsu.ru
Россия, Voronezh, 394006
I. Arsentyev
Ioffe Physical–Technical Institute
Email: paul@phys.vsu.ru
Россия, St. Petersburg, 194021
L. Vavilova
Ioffe Physical–Technical Institute
Email: paul@phys.vsu.ru
Россия, St. Petersburg, 194021
I. Tarasov
Ioffe Physical–Technical Institute
Email: paul@phys.vsu.ru
Россия, St. Petersburg, 194021
T. Prutskij
Instituto de Ciencias
Email: paul@phys.vsu.ru
Мексика, Puebla, Pue., 72050
H. Leiste
Karlsruhe Nano Micro Facility
Email: paul@phys.vsu.ru
Германия, Eggenstein-Leopoldshafen, 76344
M. Rinke
Karlsruhe Nano Micro Facility
Email: paul@phys.vsu.ru
Германия, Eggenstein-Leopoldshafen, 76344