Investigating the RTA Treatment of Ohmic Contacts to n-Layers of Heterobipolar Nanoheterostructures
- Authors: Egorkin V.I.1, Zemlyakov V.E.1, Nezhentsev A.V.1, Garmash V.I.1
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Affiliations:
- National Research University of Electronic Technology (MIET)
- Issue: Vol 52, No 15 (2018)
- Pages: 1969-1972
- Section: Technological Processes and Routes
- URL: https://journals.rcsi.science/1063-7826/article/view/205228
- DOI: https://doi.org/10.1134/S1063782618150046
- ID: 205228
Cite item
Abstract
The preparation of ohmic contacts to heterobipolar nanostructures has a number of characteristic features. In addition to the basic requirement of minimizing contact resistance, contacts to this type of structures have a transition layer whose depth of penetration must not exceed the emitter layer’s thickness, due to the possibility of short-circuiting the emitter base p–n junction. In this work, the effect the main technological parameters of rapid thermal annealing have on a contact’s characteristics are examined, and the process of obtaining a low-resistance ohmic contact to heterobipolar transistor layers is optimized. Ohmic contacts to the n-layers of heterobipolar nanoheterostructures based on gallium arsenide and produced via layer-by-layer electron-beam deposition of Ge/Au/Ni/Au are considered. The diffusion distribution profiles of doping with Ge impurities are calculated as a function of the time and temperature of rapid thermal annealing, and are examined via scanning electron microscopy. It is found that rapid thermal annealing for 60 s at a temperature of 398°C yields ohmic contacts with low resistance, smooth surface morphology, and the minimum size of the transition layer.
About the authors
V. I. Egorkin
National Research University of Electronic Technology (MIET)
Author for correspondence.
Email: kfn@miee.ru
Russian Federation, Moscow, 124498
V. E. Zemlyakov
National Research University of Electronic Technology (MIET)
Email: kfn@miee.ru
Russian Federation, Moscow, 124498
A. V. Nezhentsev
National Research University of Electronic Technology (MIET)
Email: kfn@miee.ru
Russian Federation, Moscow, 124498
V. I. Garmash
National Research University of Electronic Technology (MIET)
Email: kfn@miee.ru
Russian Federation, Moscow, 124498