| Issue |
Title |
File |
| Vol 53, No 15 (2019) |
Mathematical Model of the Evaporation of Amalgam Components in Discharge Radiation Sources |
(Eng)
|
|
Petrenko N.Y., Puchnina S.V., Gavrilov S.A.
|
| Vol 53, No 15 (2019) |
Predicting the Conditions for the Vapor-Phase Epitaxy of the III–V Compounds |
(Eng)
|
|
Vigdorovich E.N.
|
| Vol 53, No 15 (2019) |
Influence of the Metallization Composition and Annealing Process Parameters on the Resistance of Ohmic Contacts to n-type 6H-SiC |
(Eng)
|
|
Egorkin V.I., Zemlyakov V.E., Nezhentsev A.V., Gudkov V.A., Garmash V.I.
|
| Vol 53, No 15 (2019) |
Investigation of the Initial Silicon-on-Sapphire Layer Formed by CVD Techniques |
(Eng)
|
|
Fedotov S.D., Sokolov E.M., Statsenko V.N., Romashkin A.V., Timoshenkov S.P.
|
| Vol 53, No 15 (2019) |
Study of the Formation Process of Memristor Structures Based on Copper Sulfide |
(Eng)
|
|
Belov A.N., Golishnikov A.A., Mastinin A.M., Perevalov A.A., Shevyakov V.I.
|
| Vol 52, No 15 (2018) |
Dependence of Mechanical Stresses in Silicon Nitride Films on the Mode of Plasma-Enhanced Chemical Vapor Deposition |
(Eng)
|
|
Novak A.V., Novak V.R., Dedkova A.A., Gusev E.E.
|
| Vol 52, No 15 (2018) |
Using Combined Optical Techniques to Control the Shallow Etching Process |
(Eng)
|
|
Volokhovskiy A.D., Gerasimenko N.N., Petrakov D.S.
|
| Vol 52, No 15 (2018) |
Characteristics of Amorphous As2S3 Semiconductor Films Obtained via Spin Coating |
(Eng)
|
|
Hang Thi Nguyen ., Yakubov A.O., Lazarenko P.I., Volkova A.V., Sherchenkov A.A., Kozyukhin S.A.
|
| Vol 52, No 15 (2018) |
Investigating the RTA Treatment of Ohmic Contacts to n-Layers of Heterobipolar Nanoheterostructures |
(Eng)
|
|
Egorkin V.I., Zemlyakov V.E., Nezhentsev A.V., Garmash V.I.
|
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