Investigating the RTA Treatment of Ohmic Contacts to n-Layers of Heterobipolar Nanoheterostructures
- Autores: Egorkin V.1, Zemlyakov V.1, Nezhentsev A.1, Garmash V.1
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Afiliações:
- National Research University of Electronic Technology (MIET)
- Edição: Volume 52, Nº 15 (2018)
- Páginas: 1969-1972
- Seção: Technological Processes and Routes
- URL: https://journals.rcsi.science/1063-7826/article/view/205228
- DOI: https://doi.org/10.1134/S1063782618150046
- ID: 205228
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Resumo
The preparation of ohmic contacts to heterobipolar nanostructures has a number of characteristic features. In addition to the basic requirement of minimizing contact resistance, contacts to this type of structures have a transition layer whose depth of penetration must not exceed the emitter layer’s thickness, due to the possibility of short-circuiting the emitter base p–n junction. In this work, the effect the main technological parameters of rapid thermal annealing have on a contact’s characteristics are examined, and the process of obtaining a low-resistance ohmic contact to heterobipolar transistor layers is optimized. Ohmic contacts to the n-layers of heterobipolar nanoheterostructures based on gallium arsenide and produced via layer-by-layer electron-beam deposition of Ge/Au/Ni/Au are considered. The diffusion distribution profiles of doping with Ge impurities are calculated as a function of the time and temperature of rapid thermal annealing, and are examined via scanning electron microscopy. It is found that rapid thermal annealing for 60 s at a temperature of 398°C yields ohmic contacts with low resistance, smooth surface morphology, and the minimum size of the transition layer.
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Sobre autores
V. Egorkin
National Research University of Electronic Technology (MIET)
Autor responsável pela correspondência
Email: kfn@miee.ru
Rússia, Moscow, 124498
V. Zemlyakov
National Research University of Electronic Technology (MIET)
Email: kfn@miee.ru
Rússia, Moscow, 124498
A. Nezhentsev
National Research University of Electronic Technology (MIET)
Email: kfn@miee.ru
Rússia, Moscow, 124498
V. Garmash
National Research University of Electronic Technology (MIET)
Email: kfn@miee.ru
Rússia, Moscow, 124498