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Title
Authors
Vol 52, No 15 (2018)
Quantum Efficiency of Gallium Nitride–Based Heterostructures with GaInN Quantum Wells
Vigdorovich E.N.
PDF
(Eng)
Vol 52, No 12 (2018)
Formation of a Graphene-Like SiN Layer on the Surface Si(111)
Mansurov V.G., Galitsyn Y.G., Malin T.V., Teys S.A., Fedosenko E.V., Kozhukhov A.S., Zhuravlev K.S., Cora I., Pécz B.
PDF
(Eng)
Vol 50, No 13 (2016)
Improving the functional characteristics of gallium nitride during vapor phase epitaxy
Vigdorovich E.N.
PDF
(Eng)
Vol 50, No 5 (2016)
On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates
Virko M.V., Kogotkov V.S., Leonidov A.A., Voronenkov V.V., Rebane Y.T., Zubrilov A.S., Gorbunov R.I., Latyshev P.E., Bochkareva N.I., Lelikov Y.S., Tarhin D.V., Smirnov A.N., Davydov V.Y., Shreter Y.G.
PDF
(Eng)
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