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Vol 53, No 14 (2019)
J–V Characteristic of p–n Structure Formed on n-GaAs Surface by Ar+ Ion Beam
Mikoushkin V.M., Kalinovskii V.S., Kontrosh E.V., Makarevskaya E.A.
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(Eng)
Vol 53, No 11 (2019)
Changes in the Photoluminescence Properties of Semiconductor Heterostructures after Ion-Beam Etching
Levitskii Y.V., Mitrofanov M.I., Voznyuk G.V., Nikolayev D.N., Mizerov M.N., Evtikhiev V.P.
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(Eng)
Vol 53, No 16 (2019)
Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam
Sakharov A.V., Kaliteevskii M.A., Voznyuk G.V., Levitskii I.V., Mitrofanov M.I., Tsatsulnikov A.F., Lundin W.V., Rodin S.N., Usov S.O., Evtikhiev V.P.
PDF
(Eng)
Vol 53, No 16 (2019)
Etching of Disc and Ring Patterns in Si3N4/GaN Structure by Ga+ FIB
Mitrofanov M.I., Voznyuk G.V., Rodin S.N., Lundin W.V., Evtikhiev V.P., Tsatsulnikov A.F.
PDF
(Eng)
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