🔧На сайте запланированы технические работы
25.12.2025 в промежутке с 18:00 до 21:00 по Московскому времени (GMT+3) на сайте будут проводиться плановые технические работы. Возможны перебои с доступом к сайту. Приносим извинения за временные неудобства. Благодарим за понимание!
🔧Site maintenance is scheduled.
Scheduled maintenance will be performed on the site from 6:00 PM to 9:00 PM Moscow time (GMT+3) on December 25, 2025. Site access may be interrupted. We apologize for the inconvenience. Thank you for your understanding!

 

Author Details

Malin, T. V.

Issue Section Title File
Vol 51, No 3 (2017) Physics of Semiconductor Devices AlN/GaN heterostructures for normally-off transistors
Vol 52, No 2 (2018) Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in AlxGa1 – xN:Si Layers Obtained by Ammonia Molecular Beam Epitaxy
Vol 52, No 6 (2018) Fabrication, Treatment, and Testing of Materials and Structures Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers
Vol 52, No 12 (2018) Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 Formation of a Graphene-Like SiN Layer on the Surface Si(111)