Информация об авторе
Malin, T. V.
| Выпуск | Раздел | Название | Файл |
| Том 51, № 3 (2017) | Physics of Semiconductor Devices | AlN/GaN heterostructures for normally-off transistors | |
| Том 52, № 2 (2018) | Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors | Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in AlxGa1 – xN:Si Layers Obtained by Ammonia Molecular Beam Epitaxy | |
| Том 52, № 6 (2018) | Fabrication, Treatment, and Testing of Materials and Structures | Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers | |
| Том 52, № 12 (2018) | Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 | Formation of a Graphene-Like SiN Layer on the Surface Si(111) |