Semiconductors
ISSN 1063-7826 (Print)
ISSN 1090-6479 (Online)
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Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
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Keywords
GaAs
GaAs Substrate
GaN
Gallium Nitride
Sapphire Substrate
Versus Characteristic
annealing
carbon nanotubes
doping
exciton
graphene
heterostructure
heterostructures
luminescence
molecular-beam epitaxy
photoconductivity
photoluminescence
quantum dots
quantum well
silicon
thin films
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Author Details
Author Details
Maleev, N.
Issue
Section
Title
File
Vol 50, No 10 (2016)
Physics of Semiconductor Devices
Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current aperture
Vol 51, No 11 (2017)
XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors
Vol 52, No 1 (2018)
Physics of Semiconductor Devices
Emission-Line Width and α-Factor of 850-nm Single-Mode Vertical-Cavity Surface-Emitting Lasers Based on InGaAs/AlGaAs Quantum Wells
Vol 52, No 1 (2018)
Fabrication, Treatment, and Testing of Materials and Structures
Investigation of the Modified Structure of a Quantum Cascade Laser
Vol 52, No 7 (2018)
Fabrication, Treatment, and Testing of Materials and Structures
On the Fabrication and Study of Lattice-Matched Heterostructures for Quantum Cascade Lasers
Vol 53, No 8 (2019)
Physics of Semiconductor Devices
Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers
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