| Issue |
Section |
Title |
File |
| Vol 50, No 2 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Influence of defects on the photoluminescence kinetics in GaN/AlN quantum-dot structures |
|
| Vol 50, No 8 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Photoluminescence kinetics slowdown in an ensemble of GaN/AlN quantum dots upon tunneling interaction with defects |
|
| Vol 51, No 3 (2017) |
Physics of Semiconductor Devices |
AlN/GaN heterostructures for normally-off transistors |
|
| Vol 51, No 5 (2017) |
Spectroscopy, Interaction with Radiation |
Electronic excitation transfer from an organic matrix to CdS nanocrystals produced by the Langmuir–Blodgett method |
|
| Vol 52, No 1 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Mobility of the Two-Dimensional Electron Gas in DA-pHEMT Heterostructures with Various δ–n-Layer Profile Widths |
|
| Vol 52, No 2 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in AlxGa1 – xN:Si Layers Obtained by Ammonia Molecular Beam Epitaxy |
|
| Vol 52, No 6 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers |
|
| Vol 52, No 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Formation of a Graphene-Like SiN Layer on the Surface Si(111) |
|
| Vol 53, No 11 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
On the Processes of the Self-Assembly of CdS Nanocrystal Arrays Formed by the Langmuir–Blodgett Technique |
|
