| Выпуск |
Раздел |
Название |
Файл |
| Том 50, № 2 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Influence of defects on the photoluminescence kinetics in GaN/AlN quantum-dot structures |
|
| Том 50, № 8 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Photoluminescence kinetics slowdown in an ensemble of GaN/AlN quantum dots upon tunneling interaction with defects |
|
| Том 51, № 3 (2017) |
Physics of Semiconductor Devices |
AlN/GaN heterostructures for normally-off transistors |
|
| Том 51, № 5 (2017) |
Spectroscopy, Interaction with Radiation |
Electronic excitation transfer from an organic matrix to CdS nanocrystals produced by the Langmuir–Blodgett method |
|
| Том 52, № 1 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Mobility of the Two-Dimensional Electron Gas in DA-pHEMT Heterostructures with Various δ–n-Layer Profile Widths |
|
| Том 52, № 2 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Change in the Character of Biaxial Stresses with an Increase in x from 0 to 0.7 in AlxGa1 – xN:Si Layers Obtained by Ammonia Molecular Beam Epitaxy |
|
| Том 52, № 6 (2018) |
Fabrication, Treatment, and Testing of Materials and Structures |
Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers |
|
| Том 52, № 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Formation of a Graphene-Like SiN Layer on the Surface Si(111) |
|
| Том 53, № 11 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
On the Processes of the Self-Assembly of CdS Nanocrystal Arrays Formed by the Langmuir–Blodgett Technique |
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