Author Details
Palmour, J. W.
| Issue | Section | Title | File |
| Vol 50, No 3 (2016) | Physics of Semiconductor Devices | High-Voltage Silicon-Carbide Thyristor with an n-type Blocking Base | |
| Vol 50, No 5 (2016) | Physics of Semiconductor Devices | Isothermal current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers | |
| Vol 51, No 2 (2017) | Physics of Semiconductor Devices | Analysis of the impact of non-1D effects on the gate switch-on current in 4H-SiC thyristors | |
| Vol 51, No 8 (2017) | Physics of Semiconductor Devices | Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers |