Информация об авторе
Palmour, J. W.
Выпуск | Раздел | Название | Файл |
Том 50, № 3 (2016) | Physics of Semiconductor Devices | High-Voltage Silicon-Carbide Thyristor with an n-type Blocking Base | |
Том 50, № 5 (2016) | Physics of Semiconductor Devices | Isothermal current–voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers | |
Том 51, № 2 (2017) | Physics of Semiconductor Devices | Analysis of the impact of non-1D effects on the gate switch-on current in 4H-SiC thyristors | |
Том 51, № 8 (2017) | Physics of Semiconductor Devices | Current–voltage characteristics of Schottky diodes at high current densities under the injection of minority carriers |