| Issue |
Section |
Title |
File |
| Vol 50, No 4 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Features of the diagnostics of metamorphic InAlAs/InGaAs/InAlAs nanoheterostructures by high-resolution X-ray diffraction in the ω-scanning mode |
|
| Vol 50, No 11 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Investigation of the thermal stability of metastable GeSn epitaxial layers |
|
| Vol 50, No 12 (2016) |
XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 |
Quantum Hall effect and hopping conductivity in n-InGaAs/InAlAs nanoheterostructures |
|
| Vol 51, No 4 (2017) |
Physics of Semiconductor Devices |
Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates |
|
| Vol 51, No 6 (2017) |
Electronic Properties of Semiconductors |
Electron properties of surface InGaAs/InAlAs quantum wells with inverted doping on InP substrates |
|
| Vol 52, No 2 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Electron Transport in PHEMT AlGaAs/InGaAs/GaAs Quantum Wells at Different Temperatures: Influence of One-Side δ-Si Doping |
|
| Vol 52, No 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Transport In Heterostructures |
Transport in Short-Period GaAs/AlAs Superlattices with Electric Domains |
|
| Vol 52, No 11 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Temperature Dependences of the Threshold Current and Output Power of a Quantum-Cascade Laser Emitting at 3.3 THz |
|
| Vol 52, No 12 (2018) |
Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 |
Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures |
|
| Vol 52, No 15 (2018) |
Erratum |
Erratum to: Nonuniversal Scaling Behavior of Conductivity Peak Widths in the Quantum Hall Effect in InGaAs/InAlAs Structures |
|
| Vol 53, No 3 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Electron-Quantum Transport in Pseudomorphic and Metamorphic In0.2Ga0.8As-Based Quantum Wells |
|
