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Автор туралы ақпарат

Morozova, E. E.

Шығарылым Бөлім Атауы Файл
Том 50, № 11 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands
Том 50, № 12 (2016) XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers
Том 51, № 12 (2017) XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells
Том 52, № 11 (2018) Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics
Том 53, № 7 (2019) Electronic Properties of Semiconductors Influence of Annealing on the Properties of Ge:Sb/Si(001) Layers with an Antimony Concentration Above Its Equilibrium Solubility in Germanium
Том 53, № 10 (2019) Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 Locally Strained Ge/SOI Structures with an Improved Heat Sink as an Active Medium for Silicon Optoelectronics