Selective Epitaxy of Submicron GaN Structures
- Авторлар: Lundin W.1, Tsatsulnikov A.2, Rodin S.1, Sakharov A.1, Mitrofanov M.1, Levitskii I.1,2, Voznyuk G.1,3, Evtikhiev V.1
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Мекемелер:
- Ioffe Institute
- Research and Engineering Center on Submicron Heterostructures for Microelectronics, Russian Academy of Sciences
- ITMO University
- Шығарылым: Том 53, № 16 (2019)
- Беттер: 2118-2120
- Бөлім: Nanostructures Technology
- URL: https://journals.rcsi.science/1063-7826/article/view/207610
- DOI: https://doi.org/10.1134/S1063782619120157
- ID: 207610
Дәйексөз келтіру
Аннотация
The effect of the growth temperature and the flow of trimethylgallium on the process of selective epitaxy of gallium nitride in windows of submicron size have been studied. The conditions under which homogeneous nucleation and coalescence of nuclei are combined with a low growth rate are determined. The steady growth of variously oriented gallium nitride strips with a height of 50 nm and a width of 600 nm was realized.
Негізгі сөздер
Авторлар туралы
W. Lundin
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: lundin.vpegroup@mail.ioffe.ru
Ресей, St. Petersburg, 194021
A. Tsatsulnikov
Research and Engineering Center on Submicron Heterostructures for Microelectronics,Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: andrew@beam.ioffe.ru
Ресей, St. Petersburg, 194021
S. Rodin
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: s_rodin77@mail.ru
Ресей, St. Petersburg, 194021
A. Sakharov
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: val@beam.ioffe.ru
Ресей, St. Petersburg, 194021
M. Mitrofanov
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: maxi.mitrofanov@gmail.com
Ресей, St. Petersburg, 194021
I. Levitskii
Ioffe Institute; Research and Engineering Center on Submicron Heterostructures for Microelectronics,Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: levitskyar@gmail.com
Ресей, St. Petersburg, 194021; St. Petersburg, 194021
G. Voznyuk
Ioffe Institute; ITMO University
Хат алмасуға жауапты Автор.
Email: glebufa0@gmail.com
Ресей, St. Petersburg, 194021; St. Petersburg, 197101
V. Evtikhiev
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: Evtikhiev@mail.ioffe.ru
Ресей, St. Petersburg, 194021