电邮这篇文章 Selective Epitaxy of Submicron GaN Structures
- 作者: Lundin W.1, Tsatsulnikov A.2, Rodin S.1, Sakharov A.1, Mitrofanov M.1, Levitskii I.1,2, Voznyuk G.1,3, Evtikhiev V.1
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隶属关系:
- Ioffe Institute
- Research and Engineering Center on Submicron Heterostructures for Microelectronics, Russian Academy of Sciences
- ITMO University
- 期: 卷 53, 编号 16 (2019)
- 页面: 2118-2120
- 栏目: Nanostructures Technology
- URL: https://journals.rcsi.science/1063-7826/article/view/207610
- DOI: https://doi.org/10.1134/S1063782619120157
- ID: 207610
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详细
The effect of the growth temperature and the flow of trimethylgallium on the process of selective epitaxy of gallium nitride in windows of submicron size have been studied. The conditions under which homogeneous nucleation and coalescence of nuclei are combined with a low growth rate are determined. The steady growth of variously oriented gallium nitride strips with a height of 50 nm and a width of 600 nm was realized.
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作者简介
W. Lundin
Ioffe Institute
编辑信件的主要联系方式.
Email: lundin.vpegroup@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
A. Tsatsulnikov
Research and Engineering Center on Submicron Heterostructures for Microelectronics,Russian Academy of Sciences
编辑信件的主要联系方式.
Email: andrew@beam.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
S. Rodin
Ioffe Institute
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Email: s_rodin77@mail.ru
俄罗斯联邦, St. Petersburg, 194021
A. Sakharov
Ioffe Institute
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Email: val@beam.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
M. Mitrofanov
Ioffe Institute
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Email: maxi.mitrofanov@gmail.com
俄罗斯联邦, St. Petersburg, 194021
I. Levitskii
Ioffe Institute; Research and Engineering Center on Submicron Heterostructures for Microelectronics,Russian Academy of Sciences
编辑信件的主要联系方式.
Email: levitskyar@gmail.com
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 194021
G. Voznyuk
Ioffe Institute; ITMO University
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Email: glebufa0@gmail.com
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 197101
V. Evtikhiev
Ioffe Institute
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Email: Evtikhiev@mail.ioffe.ru
俄罗斯联邦, St. Petersburg, 194021
