Enviar artigo por via de e-mail Selective Epitaxy of Submicron GaN Structures
- Autores: Lundin W.1, Tsatsulnikov A.2, Rodin S.1, Sakharov A.1, Mitrofanov M.1, Levitskii I.1,2, Voznyuk G.1,3, Evtikhiev V.1
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Afiliações:
- Ioffe Institute
- Research and Engineering Center on Submicron Heterostructures for Microelectronics, Russian Academy of Sciences
- ITMO University
- Edição: Volume 53, Nº 16 (2019)
- Páginas: 2118-2120
- Seção: Nanostructures Technology
- URL: https://journals.rcsi.science/1063-7826/article/view/207610
- DOI: https://doi.org/10.1134/S1063782619120157
- ID: 207610
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Resumo
The effect of the growth temperature and the flow of trimethylgallium on the process of selective epitaxy of gallium nitride in windows of submicron size have been studied. The conditions under which homogeneous nucleation and coalescence of nuclei are combined with a low growth rate are determined. The steady growth of variously oriented gallium nitride strips with a height of 50 nm and a width of 600 nm was realized.
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Sobre autores
W. Lundin
Ioffe Institute
Autor responsável pela correspondência
Email: lundin.vpegroup@mail.ioffe.ru
Rússia, St. Petersburg, 194021
A. Tsatsulnikov
Research and Engineering Center on Submicron Heterostructures for Microelectronics,Russian Academy of Sciences
Autor responsável pela correspondência
Email: andrew@beam.ioffe.ru
Rússia, St. Petersburg, 194021
S. Rodin
Ioffe Institute
Autor responsável pela correspondência
Email: s_rodin77@mail.ru
Rússia, St. Petersburg, 194021
A. Sakharov
Ioffe Institute
Autor responsável pela correspondência
Email: val@beam.ioffe.ru
Rússia, St. Petersburg, 194021
M. Mitrofanov
Ioffe Institute
Autor responsável pela correspondência
Email: maxi.mitrofanov@gmail.com
Rússia, St. Petersburg, 194021
I. Levitskii
Ioffe Institute; Research and Engineering Center on Submicron Heterostructures for Microelectronics,Russian Academy of Sciences
Autor responsável pela correspondência
Email: levitskyar@gmail.com
Rússia, St. Petersburg, 194021; St. Petersburg, 194021
G. Voznyuk
Ioffe Institute; ITMO University
Autor responsável pela correspondência
Email: glebufa0@gmail.com
Rússia, St. Petersburg, 194021; St. Petersburg, 197101
V. Evtikhiev
Ioffe Institute
Autor responsável pela correspondência
Email: Evtikhiev@mail.ioffe.ru
Rússia, St. Petersburg, 194021
