Мақаланы E-mail арқылы жіберу Do Chemical Effects Affect the Accumulation of Structural Damage during the Implantation of Fluorine Ions into GaN?
- Авторлар: Titov A.1, Karabeshkin K.1, Karaseov P.1, Struchkov A.1
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Мекемелер:
- Peter the Great St. Petersburg Polytechnic University
- Шығарылым: Том 53, № 11 (2019)
- Беттер: 1415-1418
- Бөлім: Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)
- URL: https://journals.rcsi.science/1063-7826/article/view/207255
- DOI: https://doi.org/10.1134/S1063782619110204
- ID: 207255
Дәйексөз келтіру
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Тек жазылушылар үшін
Аннотация
The accumulation of structural damage in GaN under irradiation with accelerated F and Ne ions with energies of 1.3 and 3.2 keV/amu is investigated. It is shown that chemical effects during implantation of fluorine ions within the doses under consideration do not noticeably affect the formation of stable structural damage both in the bulk and on the surface of GaN.
Негізгі сөздер
Авторлар туралы
A. Titov
Peter the Great St. Petersburg Polytechnic University
Хат алмасуға жауапты Автор.
Email: andrei.titov@rphf.spbstu.ru
Ресей, St. Petersburg, 195251
K. Karabeshkin
Peter the Great St. Petersburg Polytechnic University
Email: andrei.titov@rphf.spbstu.ru
Ресей, St. Petersburg, 195251
P. Karaseov
Peter the Great St. Petersburg Polytechnic University
Email: andrei.titov@rphf.spbstu.ru
Ресей, St. Petersburg, 195251
A. Struchkov
Peter the Great St. Petersburg Polytechnic University
Email: andrei.titov@rphf.spbstu.ru
Ресей, St. Petersburg, 195251
