Do Chemical Effects Affect the Accumulation of Structural Damage during the Implantation of Fluorine Ions into GaN?

A. I. Titov; K. V. Karabeshkin; P. A. Karaseov; A. I. Struchkov

doi:10.1134/S1063782619110204

Do Chemical Effects Affect the Accumulation of Structural Damage during the Implantation of Fluorine Ions into GaN?

Авторы: Titov A.I.¹, Karabeshkin K.V.¹, Karaseov P.A.¹, Struchkov A.I.¹
Учреждения:
1. Peter the Great St. Petersburg Polytechnic University
Выпуск: Том 53, № 11 (2019)
Страницы: 1415-1418
Раздел: Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)
URL: https://journals.rcsi.science/1063-7826/article/view/207255
DOI: https://doi.org/10.1134/S1063782619110204
ID: 207255

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Аннотация

The accumulation of structural damage in GaN under irradiation with accelerated F and Ne ions with energies of 1.3 and 3.2 keV/amu is investigated. It is shown that chemical effects during implantation of fluorine ions within the doses under consideration do not noticeably affect the formation of stable structural damage both in the bulk and on the surface of GaN.