Отправить статью по E-mail Do Chemical Effects Affect the Accumulation of Structural Damage during the Implantation of Fluorine Ions into GaN?
- Авторы: Titov A.1, Karabeshkin K.1, Karaseov P.1, Struchkov A.1
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Учреждения:
- Peter the Great St. Petersburg Polytechnic University
- Выпуск: Том 53, № 11 (2019)
- Страницы: 1415-1418
- Раздел: Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)
- URL: https://journals.rcsi.science/1063-7826/article/view/207255
- DOI: https://doi.org/10.1134/S1063782619110204
- ID: 207255
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Аннотация
The accumulation of structural damage in GaN under irradiation with accelerated F and Ne ions with energies of 1.3 and 3.2 keV/amu is investigated. It is shown that chemical effects during implantation of fluorine ions within the doses under consideration do not noticeably affect the formation of stable structural damage both in the bulk and on the surface of GaN.
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A. Titov
Peter the Great St. Petersburg Polytechnic University
Автор, ответственный за переписку.
Email: andrei.titov@rphf.spbstu.ru
Россия, St. Petersburg, 195251
K. Karabeshkin
Peter the Great St. Petersburg Polytechnic University
Email: andrei.titov@rphf.spbstu.ru
Россия, St. Petersburg, 195251
P. Karaseov
Peter the Great St. Petersburg Polytechnic University
Email: andrei.titov@rphf.spbstu.ru
Россия, St. Petersburg, 195251
A. Struchkov
Peter the Great St. Petersburg Polytechnic University
Email: andrei.titov@rphf.spbstu.ru
Россия, St. Petersburg, 195251
