Enviar artigo por via de e-mail Do Chemical Effects Affect the Accumulation of Structural Damage during the Implantation of Fluorine Ions into GaN?
- Autores: Titov A.1, Karabeshkin K.1, Karaseov P.1, Struchkov A.1
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Afiliações:
- Peter the Great St. Petersburg Polytechnic University
- Edição: Volume 53, Nº 11 (2019)
- Páginas: 1415-1418
- Seção: Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion)
- URL: https://journals.rcsi.science/1063-7826/article/view/207255
- DOI: https://doi.org/10.1134/S1063782619110204
- ID: 207255
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Resumo
The accumulation of structural damage in GaN under irradiation with accelerated F and Ne ions with energies of 1.3 and 3.2 keV/amu is investigated. It is shown that chemical effects during implantation of fluorine ions within the doses under consideration do not noticeably affect the formation of stable structural damage both in the bulk and on the surface of GaN.
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Sobre autores
A. Titov
Peter the Great St. Petersburg Polytechnic University
Autor responsável pela correspondência
Email: andrei.titov@rphf.spbstu.ru
Rússia, St. Petersburg, 195251
K. Karabeshkin
Peter the Great St. Petersburg Polytechnic University
Email: andrei.titov@rphf.spbstu.ru
Rússia, St. Petersburg, 195251
P. Karaseov
Peter the Great St. Petersburg Polytechnic University
Email: andrei.titov@rphf.spbstu.ru
Rússia, St. Petersburg, 195251
A. Struchkov
Peter the Great St. Petersburg Polytechnic University
Email: andrei.titov@rphf.spbstu.ru
Rússia, St. Petersburg, 195251
