Low-Frequency Dielectric Relaxation in Iron-Doped Ge 28.5 Pb 15 S 56.5  Glassy System

R. A. Castro; G. I. Grabko; A. A. Kononov

doi:10.1134/S1063782618090051

Low-Frequency Dielectric Relaxation in Iron-Doped Ge_28.5Pb₁₅S_56.5 Glassy System

作者: Castro R.¹, Grabko G.², Kononov A.¹
隶属关系:
1. Herzen State Pedagogical University of Russia
2. Transbaikal State University
期: 卷 52, 编号 9 (2018)
页面: 1160-1162
栏目: Amorphous, Vitreous, and Organic Semiconductors
URL: https://journals.rcsi.science/1063-7826/article/view/204032
DOI: https://doi.org/10.1134/S1063782618090051
ID: 204032

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详细
作者简介
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详细

The dielectric relaxation processes in Ge_28.5Pb₁₅S_56.5 glassy system are investigated. The introduction of an iron impurity into a glass matrix is shown to sharply increase the permittivity ε' and decrease the dissipation factor tanδ. The found regularities are explained within the cluster structure (two-phase) model of doped glass.

关键词

Glassy Systems, Dissipation Factor Tanδ, Doped Glasses, Iron Impurities, Dipole Polarization Relaxation

作者简介

R. Castro

Herzen State Pedagogical University of Russia

编辑信件的主要联系方式.
Email: recastro@mail.ru
俄罗斯联邦, St. Petersburg, 191186

G. Grabko

Transbaikal State University

Email: recastro@mail.ru
俄罗斯联邦, Chita, 672039

A. Kononov