Optimal Doping of Diode Current Interrupters
- Авторлар: Kyuregyan A.1
-
Мекемелер:
- All-Russia Electrical Engineering Institute
- Шығарылым: Том 52, № 3 (2018)
- Беттер: 341-347
- Бөлім: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/202603
- DOI: https://doi.org/10.1134/S1063782618030144
- ID: 202603
Дәйексөз келтіру
Аннотация
An analytical solution to the problem of a decrease in energy losses Ω in diode current interrupters is derived for the stage of recovery of the blocking ability due to optimization of the dopant distribution N(x) over the structure thickness. The distribution N(x) close to optimal is found; it makes it possible to decrease Ω by 30–55% compared with standard design interrupters with homogeneously doped high-resistivity layers.
Авторлар туралы
A. Kyuregyan
All-Russia Electrical Engineering Institute
Хат алмасуға жауапты Автор.
Email: ask@vei.ru
Ресей, Moscow, 111250