Optimal Doping of Diode Current Interrupters
- 作者: Kyuregyan A.1
-
隶属关系:
- All-Russia Electrical Engineering Institute
- 期: 卷 52, 编号 3 (2018)
- 页面: 341-347
- 栏目: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/202603
- DOI: https://doi.org/10.1134/S1063782618030144
- ID: 202603
如何引用文章
详细
An analytical solution to the problem of a decrease in energy losses Ω in diode current interrupters is derived for the stage of recovery of the blocking ability due to optimization of the dopant distribution N(x) over the structure thickness. The distribution N(x) close to optimal is found; it makes it possible to decrease Ω by 30–55% compared with standard design interrupters with homogeneously doped high-resistivity layers.
作者简介
A. Kyuregyan
All-Russia Electrical Engineering Institute
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