Optimal Doping of Diode Current Interrupters
- Авторы: Kyuregyan A.1
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Учреждения:
- All-Russia Electrical Engineering Institute
- Выпуск: Том 52, № 3 (2018)
- Страницы: 341-347
- Раздел: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/202603
- DOI: https://doi.org/10.1134/S1063782618030144
- ID: 202603
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Аннотация
An analytical solution to the problem of a decrease in energy losses Ω in diode current interrupters is derived for the stage of recovery of the blocking ability due to optimization of the dopant distribution N(x) over the structure thickness. The distribution N(x) close to optimal is found; it makes it possible to decrease Ω by 30–55% compared with standard design interrupters with homogeneously doped high-resistivity layers.
Об авторах
A. Kyuregyan
All-Russia Electrical Engineering Institute
Автор, ответственный за переписку.
Email: ask@vei.ru
Россия, Moscow, 111250