Мақаланы E-mail арқылы жіберу Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate
- Авторлар: Aleshkin V.1,2, Baidus N.1,2, Dubinov A.1,2, Kudryavtsev K.1,2, Nekorkin S.2, Novikov A.1,2, Rykov A.2, Samartsev I.2, Fefelov A.3, Yurasov D.1,2, Krasilnik Z.1,2
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Мекемелер:
- Institute for Physics of Microstuctures
- Lobachevsky State University of Nizhny Novgorod
- OJSC RPE “Salut”
- Шығарылым: Том 51, № 11 (2017)
- Беттер: 1477-1480
- Бөлім: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://journals.rcsi.science/1063-7826/article/view/201683
- DOI: https://doi.org/10.1134/S1063782617110057
- ID: 201683
Дәйексөз келтіру
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Рұқсат берілді
Тек жазылушылар үшін
Аннотация
InGaAs/GaAs/AlGaAs laser diodes with quantum wells are grown by the metal-organic chemical vapor deposition (MOCVD) method on an exact Si (001) substrate with a Ge buffer layer. The diodes generate stimulated emission in the pulsed mode at room temperature in the spectral range from 1.09 to 1.11 μm.
Авторлар туралы
V. Aleshkin
Institute for Physics of Microstuctures; Lobachevsky State University of Nizhny Novgorod
Хат алмасуға жауапты Автор.
Email: aleshkin@ipmras.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
N. Baidus
Institute for Physics of Microstuctures; Lobachevsky State University of Nizhny Novgorod
Email: aleshkin@ipmras.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
A. Dubinov
Institute for Physics of Microstuctures; Lobachevsky State University of Nizhny Novgorod
Email: aleshkin@ipmras.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
K. Kudryavtsev
Institute for Physics of Microstuctures; Lobachevsky State University of Nizhny Novgorod
Email: aleshkin@ipmras.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
S. Nekorkin
Lobachevsky State University of Nizhny Novgorod
Email: aleshkin@ipmras.ru
Ресей, Nizhny Novgorod, 603950
A. Novikov
Institute for Physics of Microstuctures; Lobachevsky State University of Nizhny Novgorod
Email: aleshkin@ipmras.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
A. Rykov
Lobachevsky State University of Nizhny Novgorod
Email: aleshkin@ipmras.ru
Ресей, Nizhny Novgorod, 603950
I. Samartsev
Lobachevsky State University of Nizhny Novgorod
Email: aleshkin@ipmras.ru
Ресей, Nizhny Novgorod, 603950
A. Fefelov
OJSC RPE “Salut”
Email: aleshkin@ipmras.ru
Ресей, Nizhny Novgorod, 603950
D. Yurasov
Institute for Physics of Microstuctures; Lobachevsky State University of Nizhny Novgorod
Email: aleshkin@ipmras.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
Z. Krasilnik
Institute for Physics of Microstuctures; Lobachevsky State University of Nizhny Novgorod
Email: aleshkin@ipmras.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
