电邮这篇文章 Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate
- 作者: Aleshkin V.1,2, Baidus N.1,2, Dubinov A.1,2, Kudryavtsev K.1,2, Nekorkin S.2, Novikov A.1,2, Rykov A.2, Samartsev I.2, Fefelov A.3, Yurasov D.1,2, Krasilnik Z.1,2
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隶属关系:
- Institute for Physics of Microstuctures
- Lobachevsky State University of Nizhny Novgorod
- OJSC RPE “Salut”
- 期: 卷 51, 编号 11 (2017)
- 页面: 1477-1480
- 栏目: XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017
- URL: https://journals.rcsi.science/1063-7826/article/view/201683
- DOI: https://doi.org/10.1134/S1063782617110057
- ID: 201683
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详细
InGaAs/GaAs/AlGaAs laser diodes with quantum wells are grown by the metal-organic chemical vapor deposition (MOCVD) method on an exact Si (001) substrate with a Ge buffer layer. The diodes generate stimulated emission in the pulsed mode at room temperature in the spectral range from 1.09 to 1.11 μm.
作者简介
V. Aleshkin
Institute for Physics of Microstuctures; Lobachevsky State University of Nizhny Novgorod
编辑信件的主要联系方式.
Email: aleshkin@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
N. Baidus
Institute for Physics of Microstuctures; Lobachevsky State University of Nizhny Novgorod
Email: aleshkin@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
A. Dubinov
Institute for Physics of Microstuctures; Lobachevsky State University of Nizhny Novgorod
Email: aleshkin@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
K. Kudryavtsev
Institute for Physics of Microstuctures; Lobachevsky State University of Nizhny Novgorod
Email: aleshkin@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
S. Nekorkin
Lobachevsky State University of Nizhny Novgorod
Email: aleshkin@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950
A. Novikov
Institute for Physics of Microstuctures; Lobachevsky State University of Nizhny Novgorod
Email: aleshkin@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
A. Rykov
Lobachevsky State University of Nizhny Novgorod
Email: aleshkin@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950
I. Samartsev
Lobachevsky State University of Nizhny Novgorod
Email: aleshkin@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950
A. Fefelov
OJSC RPE “Salut”
Email: aleshkin@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950
D. Yurasov
Institute for Physics of Microstuctures; Lobachevsky State University of Nizhny Novgorod
Email: aleshkin@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
Z. Krasilnik
Institute for Physics of Microstuctures; Lobachevsky State University of Nizhny Novgorod
Email: aleshkin@ipmras.ru
俄罗斯联邦, Nizhny Novgorod, 603950; Nizhny Novgorod, 603950
