Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well

N. V. Dikareva; B. N. Zvonkov; O. V. Vikhrova; S. M. Nekorkin; V. Ya. Aleshkin; A. A. Dubinov

doi:10.1134/S1063782617100086

Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well

Autores: Dikareva N.V.¹, Zvonkov B.N.¹, Vikhrova O.V.¹, Nekorkin S.M.¹, Aleshkin V.Y.¹^,2, Dubinov A.A.¹^,2
Afiliações:
1. Physical–Technical Research Institute
2. Institute of Physics of Microstructures
Edição: Volume 51, Nº 10 (2017)
Páginas: 1360-1363
Seção: Physics of Semiconductor Devices
URL: https://journals.rcsi.science/1063-7826/article/view/201410
DOI: https://doi.org/10.1134/S1063782617100086
ID: 201410

Citar

Texto integral

Acesso aberto
Acesso é fechado

Acesso está concedido
Acesso é fechado

Somente assinantes

Resumo
Sobre autores
Bibliografia
Arquivos suplementares
Estatísticas

Resumo

The results of investigation of a metal-organic-vapor-phase-epitaxy-grown GaAsSb/GaAs/InGaP laser structure are presented. Steady two-band generation caused by spatially direct and indirect optical transitions is obtained. Observation of the sum frequency shows the effective intracavity mixing of modes in semiconductor lasers of such a type.