Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well

N. V. Dikareva; B. N. Zvonkov; O. V. Vikhrova; S. M. Nekorkin; V. Ya. Aleshkin; A. A. Dubinov

doi:10.1134/S1063782617100086

Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well

作者: Dikareva N.¹, Zvonkov B.¹, Vikhrova O.¹, Nekorkin S.¹, Aleshkin V.¹^,2, Dubinov A.¹^,2
隶属关系:
1. Physical–Technical Research Institute
2. Institute of Physics of Microstructures
期: 卷 51, 编号 10 (2017)
页面: 1360-1363
栏目: Physics of Semiconductor Devices
URL: https://journals.rcsi.science/1063-7826/article/view/201410
DOI: https://doi.org/10.1134/S1063782617100086
ID: 201410

如何引用文章

全文:

开放存取

##reader.subscriptionAccessGranted##
受限制的访问

订阅存取

详细
作者简介
参考
统计

详细

The results of investigation of a metal-organic-vapor-phase-epitaxy-grown GaAsSb/GaAs/InGaP laser structure are presented. Steady two-band generation caused by spatially direct and indirect optical transitions is obtained. Observation of the sum frequency shows the effective intracavity mixing of modes in semiconductor lasers of such a type.