Tensoresistance of n-Ge with different crystallographic orientations in the presence of a classically high magnetic field and without it

Аннотация

Variations in the tensoresistance, tensomagnetoresistance, and magnetotensoresistance are experimentally and theoretically studied in wide ranges of magnetic-field strengths, 0 kOe ≤ H ≤ 100 kOe, and mechanical stresses, 0 GPa ≤ X ≤ 0.7 GPa, at 77 K under conditions of nondegenerate statistics of the electron gas in n-Ge crystals with different crystallographic orientations.