Tensoresistance of n-Ge with different crystallographic orientations in the presence of a classically high magnetic field and without it
- 作者: Gaidar G.1, Baranskii P.2
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隶属关系:
- Institute for Nuclear Research
- Lashkaryov Institute of Semiconductor Physics
- 期: 卷 51, 编号 7 (2017)
- 页面: 936-941
- 栏目: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/200629
- DOI: https://doi.org/10.1134/S1063782617070090
- ID: 200629
如何引用文章
详细
Variations in the tensoresistance, tensomagnetoresistance, and magnetotensoresistance are experimentally and theoretically studied in wide ranges of magnetic-field strengths, 0 kOe ≤ H ≤ 100 kOe, and mechanical stresses, 0 GPa ≤ X ≤ 0.7 GPa, at 77 K under conditions of nondegenerate statistics of the electron gas in n-Ge crystals with different crystallographic orientations.
作者简介
G. Gaidar
Institute for Nuclear Research
编辑信件的主要联系方式.
Email: gaydar@kinr.kiev.ua
乌克兰, Kyiv, 03680
P. Baranskii
Lashkaryov Institute of Semiconductor Physics
Email: gaydar@kinr.kiev.ua
乌克兰, Kyiv, 03028