Tensoresistance of n-Ge with different crystallographic orientations in the presence of a classically high magnetic field and without it


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详细

Variations in the tensoresistance, tensomagnetoresistance, and magnetotensoresistance are experimentally and theoretically studied in wide ranges of magnetic-field strengths, 0 kOe ≤ H ≤ 100 kOe, and mechanical stresses, 0 GPa ≤ X ≤ 0.7 GPa, at 77 K under conditions of nondegenerate statistics of the electron gas in n-Ge crystals with different crystallographic orientations.

作者简介

G. Gaidar

Institute for Nuclear Research

编辑信件的主要联系方式.
Email: gaydar@kinr.kiev.ua
乌克兰, Kyiv, 03680

P. Baranskii

Lashkaryov Institute of Semiconductor Physics

Email: gaydar@kinr.kiev.ua
乌克兰, Kyiv, 03028


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