Picosecond relaxation of band-gap renormalization induced by the Coulomb interaction of charge carriers in GaAs
- Авторы: Ageeva N.1, Bronevoi I.1, Zabegaev D.1, Krivonosov A.1
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Учреждения:
- Kotel’nikov Institute of Radio Engineering and Electronics
- Выпуск: Том 51, № 5 (2017)
- Страницы: 565-570
- Раздел: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/199828
- DOI: https://doi.org/10.1134/S1063782617050025
- ID: 199828
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Аннотация
The dynamics of the long-wavelength edge of the spectrum of intrinsic stimulated picosecond emission occurring upon the picosecond pumping of GaAs is studied experimentally. The shortage of bandgap renormalization induced by the Coulomb interaction of charge carriers, compared to renormalization in the quasi-steady state, is observed. It is conceived that the shortage is caused by the fact that, under the experimental conditions of the study, the renormalization relaxation time is in the picosecond region.
Об авторах
N. Ageeva
Kotel’nikov Institute of Radio Engineering and Electronics
Email: bil@cplire.ru
Россия, Moscow, 125009
I. Bronevoi
Kotel’nikov Institute of Radio Engineering and Electronics
Автор, ответственный за переписку.
Email: bil@cplire.ru
Россия, Moscow, 125009
D. Zabegaev
Kotel’nikov Institute of Radio Engineering and Electronics
Email: bil@cplire.ru
Россия, Moscow, 125009
A. Krivonosov
Kotel’nikov Institute of Radio Engineering and Electronics
Email: bil@cplire.ru
Россия, Moscow, 125009