Picosecond relaxation of band-gap renormalization induced by the Coulomb interaction of charge carriers in GaAs
- Autores: Ageeva N.1, Bronevoi I.1, Zabegaev D.1, Krivonosov A.1
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Afiliações:
- Kotel’nikov Institute of Radio Engineering and Electronics
- Edição: Volume 51, Nº 5 (2017)
- Páginas: 565-570
- Seção: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/199828
- DOI: https://doi.org/10.1134/S1063782617050025
- ID: 199828
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Resumo
The dynamics of the long-wavelength edge of the spectrum of intrinsic stimulated picosecond emission occurring upon the picosecond pumping of GaAs is studied experimentally. The shortage of bandgap renormalization induced by the Coulomb interaction of charge carriers, compared to renormalization in the quasi-steady state, is observed. It is conceived that the shortage is caused by the fact that, under the experimental conditions of the study, the renormalization relaxation time is in the picosecond region.
Sobre autores
N. Ageeva
Kotel’nikov Institute of Radio Engineering and Electronics
Email: bil@cplire.ru
Rússia, Moscow, 125009
I. Bronevoi
Kotel’nikov Institute of Radio Engineering and Electronics
Autor responsável pela correspondência
Email: bil@cplire.ru
Rússia, Moscow, 125009
D. Zabegaev
Kotel’nikov Institute of Radio Engineering and Electronics
Email: bil@cplire.ru
Rússia, Moscow, 125009
A. Krivonosov
Kotel’nikov Institute of Radio Engineering and Electronics
Email: bil@cplire.ru
Rússia, Moscow, 125009