Picosecond relaxation of band-gap renormalization induced by the Coulomb interaction of charge carriers in GaAs
- Авторлар: Ageeva N.1, Bronevoi I.1, Zabegaev D.1, Krivonosov A.1
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Мекемелер:
- Kotel’nikov Institute of Radio Engineering and Electronics
- Шығарылым: Том 51, № 5 (2017)
- Беттер: 565-570
- Бөлім: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/199828
- DOI: https://doi.org/10.1134/S1063782617050025
- ID: 199828
Дәйексөз келтіру
Аннотация
The dynamics of the long-wavelength edge of the spectrum of intrinsic stimulated picosecond emission occurring upon the picosecond pumping of GaAs is studied experimentally. The shortage of bandgap renormalization induced by the Coulomb interaction of charge carriers, compared to renormalization in the quasi-steady state, is observed. It is conceived that the shortage is caused by the fact that, under the experimental conditions of the study, the renormalization relaxation time is in the picosecond region.
Авторлар туралы
N. Ageeva
Kotel’nikov Institute of Radio Engineering and Electronics
Email: bil@cplire.ru
Ресей, Moscow, 125009
I. Bronevoi
Kotel’nikov Institute of Radio Engineering and Electronics
Хат алмасуға жауапты Автор.
Email: bil@cplire.ru
Ресей, Moscow, 125009
D. Zabegaev
Kotel’nikov Institute of Radio Engineering and Electronics
Email: bil@cplire.ru
Ресей, Moscow, 125009
A. Krivonosov
Kotel’nikov Institute of Radio Engineering and Electronics
Email: bil@cplire.ru
Ресей, Moscow, 125009